Titanium Silicide

Overview of Titanium Silicide Sputtering Targets

Titanium silicide sputtering targets are high-performance metallic silicide ceramic targets primarily used for depositing low-resistance, high-thermal-stability titanium silicide films. This product is widely applied in the fabrication of contact vias, interconnects, and gates for semiconductor integrated circuits, serving as an indispensable key material in advanced chip manufacturing.

We offer TiSi₂ sputtering targets in multiple specifications with high purity and density. Professional bonding services to various substrate materials (e.g., copper, aluminum, molybdenum) are available based on your equipment requirements.

Product Highlights

High Purity
Exceptionally High Density
Precise Si/Ti Stoichiometric Ratio
Uniform Microstructure with Stable Sputtering Performance
Low-Resistivity Film Characteristics

Applications of Titanium Silicide Sputtering Targets

Semiconductor Contacts and Interconnects: Deposits low-resistance titanium silicide films (C54 phase TiSi₂) on silicon wafers to form ohmic contacts for transistor source/drain and gate terminals, as well as local interconnects, significantly reducing circuit delay.
Barrier and Adhesion Layers: In multilayer interconnect structures, TiSi₂ films serve as effective barrier and adhesion layers, preventing interdiffusion between metal interconnects and the silicon substrate to enhance device reliability.
Silicon-Based Solar Cells: Used for fabricating back electrodes and contact layers in high-efficiency crystalline silicon solar cells, improving carrier collection efficiency.
Specialized Functional Coatings: Due to its high hardness and excellent chemical inertness, it can be used for wear-resistant and corrosion-resistant coatings on tool and mold surfaces.

FAQs

Q1: How does the Titanium Silicide target ensure phase composition and low resistivity in sputtering?
A1: We achieve near-ideal phase composition by precisely controlling the target’s chemical composition and ensuring a dense, uniform microstructure. Subsequent rapid thermal annealing (RTA) facilitates phase transformation from high-resistance C49 to low-resistance C54, delivering the desired properties.

Q2: What is the primary difference between C49-phase and C54-phase TiSi₂ films?
A2: The C49 phase exhibits higher resistivity and is the initial phase after film deposition. Following appropriate annealing treatment, it transforms into the C54 phase with extremely low resistivity, which is the functional phase actually utilized in devices.

Q3: Why is target density so critical?
A3: High density effectively prevents particle splatter and abnormal discharges during sputtering, ensuring deposition stability. This yields uniform, dense films with fewer defects while extending target lifespan.

Q4: For which sputtering equipment is Titanium Silicide target material suitable?
A4: Suitable for DC magnetron sputtering and RF magnetron sputtering equipment. We offer standard circular and rectangular sizes, with custom dimensions available to match various sputtering cathode models.

Report

Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Size Inspection Report
Third-party testing reports available upon request

Why Choose Us?

As a specialized supplier of advanced electronic materials, we deeply understand the critical role of TiSi₂ targets in micro/nanofabrication. We not only provide high-quality targets compliant with SEMI standards but also prioritize batch consistency and a broad process window.