Gallium telluride powder is a high-purity III-VI compound semiconductor material with the chemical formula GaTe. This product appears as a gray to black fine crystalline powder, exhibiting a typical layered crystal structure and a narrow direct bandgap of approximately 1.0–1.8 eV. Combining outstanding photoelectric response, thermoelectric conversion potential, and unique phase-change properties, it serves as a critical foundational material for advanced infrared detection, new energy applications, and cutting-edge nanodevice R&D.
We offer high-quality gallium telluride powder in multiple purity grades and particle size specifications, with professional sealed packaging available. Contact us for samples.
Narrow direct bandgap semiconductor properties
Unique layered (two-dimensional) crystal structure
Excellent optoelectronic and thermoelectric performance
Potential for phase-change material applications
High chemical purity and stability
Infrared Optoelectronics and Detection: Used to fabricate high-performance near-infrared photodetectors and light-emitting devices responsive to specific infrared bands.
Thermoelectric Energy Conversion: Serves as a thermoelectric material for developing efficient thermoelectric power modules that directly convert waste heat into electricity.
Frontier 2D Materials: Acts as a precursor for fabricating 2D GaTe nanosheets to study novel physical properties and enable novel devices.
Phase-Change Memory Research: Explored as a candidate material for next-generation phase-change memory, leveraging its rapid reversible crystalline phase transitions.
Q1: What is the difference between GaTe powder and Ga₂Te₃ powder?
A1: The core difference lies in their stoichiometry and properties. GaTe is a 1:1 compound with a narrower bandgap, emphasizing optoelectronic devices; Ga₂Te₃ is a telluride-rich compound typically exhibiting superior thermoelectric performance.
Q2: How should the product be stored?
A2: This product is sensitive to air. Store it sealed in a dry, inert gas environment, strictly protected from moisture and light to prevent oxidation and degradation.
Q3: Are there safety risks during use?
A3: Tellurides possess some toxicity. Avoid inhaling dust during handling. Work in a well-ventilated area while wearing protective equipment and adhere to safety protocols.
Q4: What are the primary advantages of GaTe powder?
A4: Its key strengths lie in its suitable narrow direct bandgap and layered structure, offering unique potential for infrared detection and novel two-dimensional electronic devices.
Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports available upon request
Leveraging our technical expertise in specialty semiconductor materials like tellurides, we provide stable, reliable high-purity GaTe powder alongside professional application support.
Molecular Formula: GaTe
Molecular Weight: 165.72 g/mol
Appearance: Grayish-black powder
Density: 5.76 g/cm³
Melting Point: Approximately 780 °C
Crystal Structure: Monoclinic
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
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