Titanium Silicon Carbide sputtering targets are functional ceramic targets based on a MAX-phase structure, combining the conductivity of metals with the high-temperature resistance of ceramics. These targets are primarily used to prepare functional thin films requiring high temperature resistance, conductivity, and structural stability.
We offer Ti3SiC2 sputtering targets with uniform composition and stable structure, suitable for DC or RF magnetron sputtering processes. Different sizes and structural forms can be provided to meet equipment requirements. Please contact us for technical parameters and application suggestions.
MAX-phase layered crystal structure
Good electrical conductivity, suitable for magnetron sputtering
Excellent thermal stability and thermal shock resistance
Stable composition and good repeatability during sputtering
Suitable for high-temperature and vacuum deposition environments
Can be used to prepare functional and structural thin films
Functional Thin Film Deposition: Used to prepare functional thin films with both conductivity and high-temperature resistance, suitable for high-end functional device applications.
High Temperature Resistance and Protective Coatings: Ti₃SiC₂ thin films exhibit good structural stability under high temperature conditions and can be used for high-temperature protection and structural coatings.
Semiconductor and Microelectronics Research: Suitable for functional layer deposition in semiconductor device, MEMS, and related materials research.
Scientific Research and Materials Development: Widely used in the research of MAX Phase thin films, growth mechanisms, and novel layered materials.
Q1: Which sputtering method is Ti3SiC2 sputtering target suitable for?
A1: This target has good conductivity and can be used for DC magnetron sputtering, as well as RF magnetron sputtering systems.
Q2: Is the composition of Ti3SiC2 target stable during sputtering?
A2: Under reasonable process parameters, this sputtering target can maintain good compositional consistency, making it suitable for thin film deposition with high repeatability requirements.
Q3: Is Ti3SiC2 sputtering target suitable for high-temperature deposition processes?
A3: Yes, this target material possesses excellent thermal stability and thermal shock resistance, making it suitable for high-temperature or long-term sputtering conditions.
Q4: In which research areas is Ti3SiC2 thin film typically used?
A4: Primarily used in MAX Phase thin films, biocompatible materials research, wear-resistant and high-temperature coatings, and conductive ceramic thin films.
Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Size Inspection Report
Third-party testing reports available upon request
We specialize in the research and supply of functional ceramics and advanced target materials, providing stable and reliable solutions for material structure control, target densification, and application adaptation, supporting research and industrial-grade thin film deposition needs.
Molecular Formula: Ti₃SiC₂
Molecular Weight: 195.87 g/mol
Appearance: Gray target material
Density: Approximately 4.5 g/cm³
Crystal Structure: Hexagonal (P6₃/mmc, MAX phase)
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
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