| Product ID | Formula | Purity | Dimension | Inquiry |
|---|---|---|---|---|
| 140600ST001 | SiC | 99.5% | 299.6mm x 129mm x 5mm | Inquire |
| 140600ST002 | SiC | 99.5% | Ø 25.4mm x 3.175 mm | Inquire |
| 140600ST003 | SiC | 99.5% | Ø 25.4mm x 6.35 mm | Inquire |
| 140600ST004 | SiC | 99.5% | Ø 50.8mm x 3.175 mm | Inquire |
| 140600ST005 | SiC | 99.5% | Ø 50.8mm x 6.35 mm | Inquire |
| 140600ST006 | SiC | 99.5% | Ø 101.6mm x 3.175 mm | Inquire |
| 140600ST007 | SiC | 99.9% | Ø 76.2mm x 3.175mm | Inquire |
| 140600ST008 | SiC | 99.9% | Ø 76.2mm x 6.35mm | Inquire |
| 140600ST009 | SiC | 99.95% | Ø 200mm x 6mm | Inquire |
| 140600ST010 | SiC | 99.99% | Ø 25.4mm x 3.175 mm | Inquire |
Silicon carbide sputtering targets are ceramic targets suitable for the preparation of highly stable thin films, possessing excellent high-temperature resistance, wear resistance, and chemical stability. They are primarily used for preparing protective coatings, functional thin films, and thin film structures related to electronic devices.
We can provide process-compatible Silicon Carbide sputtering targets and support technical integration between target structures and deposition conditions. Contact us now!
Stable film composition
Strong adaptability to high-temperature conditions
Excellent wear and corrosion resistance
Good sputtering process stability
Suitable for various deposition processes
Protective and Wear-Resistant Coatings: Silicon carbide targets are commonly used to prepare high-hardness, protective thin films, improving surface wear resistance and service life.
Electronic and Functional Thin Films: Suitable for the deposition of electronic devices and functional thin films, meeting the requirements of high-temperature and high-power applications.
Optical and Functional Surface Engineering: In functional surface engineering, silicon carbide thin films provide stable physical and chemical properties.
Research and Process Development: Widely used in laboratory R&D and process validation stages, supporting process parameter optimization.
Q1: Which deposition processes are suitable for Silicon Carbide sputtering targets?
A1: Commonly used in thin film deposition processes such as magnetron sputtering, meeting various process requirements.
Q2: How do silicon carbide targets perform in high-temperature deposition?
A2: They maintain good structural stability and sputtering consistency even under high-temperature conditions.
Q3: What are the main advantages of SiC thin films?
A3: Primarily reflected in high hardness, wear resistance, corrosion resistance, and good thermal stability.
Q4: Does the target structure affect sputtering stability?
A4: A well-designed target structure helps improve the stability of the sputtering process and the uniformity of the thin film.
Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Size Inspection Report
Third-party testing reports available upon request
We possess continuous supply and process understanding capabilities in the field of ceramic sputtering targets, enabling us to provide stable and traceable Silicon Carbide sputtering targets, supporting customers in achieving reliable thin film deposition results during the R&D and application stages.
Molecular Formula: SiC
Molecular Weight: 52.11 g/mol
Appearance: Black, dense target block
Density: 3.21–3.22 g/cm³ (sintered target)
Melting Point: 2730 °C (decomposes)
Crystal Structure: Hexagonal (α-SiC); Cubic (β-SiC)
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
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