Platinum Manganese Alloy sputtering targets are key materials designed for magnetic storage and spin electronics, and are widely used in MRAM, GMR sensors and various spin valve structures. Its unique antiferromagnetism and high thermal stability make it an ideal choice for fixed magnetic layers.
We can provide Platinum Manganese Alloy sputtering targets in various shapes and sizes, including round, rectangular, annular, etc., and can be precisely customized according to your specific process requirements. We also provide comprehensive technical support and after-sales service to help you improve film deposition efficiency and product consistency.
Composition ratio: or customizable
Purity: 99.95%
High thermal stability, suitable for high temperature annealing process
Excellent antiferromagnetic coupling performance for fixed magnetization direction
High density and fine particles, suitable for precision sputtering systems
Various sizes and backplane bonding services are available (Bonding)
Magnetic random access memory (MRAM): PtMn is widely used as the antiferromagnetic material of the fixed layer to ensure a stable magnetic pole direction.
Hard disk head: In GMR or TMR structure, PtMn is used as Pinning layer material to achieve high sensitivity reading of magnetic signals.
Spintronic devices: As exchange bias layer, it is used to regulate magnetic interface behavior.
Magnetic sensor: High stability makes it suitable for industrial automation and automotive sensing.
We provide detailed Certificate of Analysis (COA), Material Safety Data Sheet (MSDS) and composition analysis report for each batch of PtMn target. According to customer needs, third-party institutions can also be commissioned to conduct composition and magnetic testing to ensure that product quality meets high-end application requirements.
Molecular formula: PtMn Appearance: Silver-gray metal tarPlatinum metal sputtering target is a precious metal target developed specifically for high-end thin film deposition
Density: about 15.0 g/cm³
Melting point: about 1,550–1,650 °C (alloy melting point)
Crystal structure: L1₀ ordered structure (suitable for magnetic storage devices)
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
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