Germanium metal wafers are thin-film substrate materials fabricated from ultra-high-purity germanium single crystals through precision cutting, grinding, and polishing. Possessing outstanding semiconductor properties and unique optical characteristics, they serve as core foundational materials for modern infrared optics, high-performance photovoltaics, and advanced semiconductor devices. As a key substrate for high-end infrared optical components and efficient multi-junction solar cells, it also serves as an ideal platform for next-generation high-speed electronic and optoelectronic integrated devices.
We offer germanium wafers in multiple specifications, including standard polished wafers, epitaxial substrates, and advanced Ge-on-Insulator (Ge-on-Si) wafers. Customization options for crystal orientation, thickness, and surface treatment are available. Contact our sales team for inquiries.
Ultra-high purity
Large-diameter wafers
Extremely low dislocation density (dislocation-free single crystals)
Superior surface quality
Multiple crystal orientations and resistivity options available
Provides epitaxy-ready surface treatments
Infrared Optics: Used in manufacturing high-performance infrared lenses, windows, and filters for thermal imaging systems and night vision devices.
Photovoltaics & Energy: Serves as substrate for high-efficiency multijunction solar cells in III-V compounds (e.g., GaAs), enabling maximum photovoltaic conversion efficiency.
Advanced Semiconductor Devices: Serves as substrate material for high-speed, low-power nanoscale transistors (e.g., GeOI MOSFETs), enhancing chip performance. Functions as photodetector and modulator material in silicon-based optoelectronic integration, enabling optical-to-electrical data conversion.
Heterogeneous Epitaxy & Materials Science: Acts as an ideal template for high-quality III-V compound semiconductor epitaxial growth (e.g., GaAs) used in optoelectronic devices.
Q1: What is the primary difference between germanium wafers and silicon wafers?
A1: The core distinction lies in performance. Germanium wafers offer high electron mobility and transparency to infrared light, making them suitable for high-end infrared and specialty devices. Silicon wafers are cost-effective with mature processes, remaining the absolute mainstream for integrated circuits.
Q2: What purity level is required for semiconductor manufacturing?
A2: Extremely high. For manufacturing devices like transistors, germanium purity typically must reach 8N (99.999999%) or higher.
Q3: What distinguishes standard germanium wafers from GeOI wafers?
A3: Structural differences. GeOI stands for “germanium on insulator,” combining germanium’s high mobility with the superior electrical isolation properties of insulating layers. This enables the fabrication of devices with enhanced performance and lower power consumption.
Q4: What precautions are required for handling and storing germanium wafers?
A4: Moisture protection is essential. Store in dedicated wafer boxes within a cleanroom environment. Due to their brittle nature, handle with extreme care during removal and placement to prevent edge impacts that could cause breakage.
Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports available upon request
Leveraging our deep technical expertise in germanium crystal growth and wafer processing, we provide comprehensive substrate solutions spanning from material-level to system-level applications.
Molecular Formula: Ge
Molecular Weight: 72.61
Appearance: Silver-gray flakes with a metallic luster
Density: 5.323 – 5.35 g/cm³
Melting Point: 937.4 °C
Boiling Point: 2830 °C
Crystal Structure: Diamond-type cubic crystal structure
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
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