Gallium phosphide sputtering targets are functional ceramic targets fabricated from high-purity gallium phosphide material via advanced powder metallurgy or melting processes. As a classic III-V compound semiconductor, gallium phosphide possesses an indirect bandgap of approximately 2.26 eV. Specifically designed for physical vapor deposition (PVD) processes, this target material enables the deposition of high-quality GaP films. It serves as a core material for manufacturing specific-wavelength optoelectronic devices, high-speed electronic components, and specialized functional coatings.
We offer high-quality GaP ceramic sputtering targets in multiple purities, dimensions, and with optional bonding services. Contact us.
High purity and precise stoichiometry
Classic III-V semiconductor material
Excellent film deposition uniformity
High density and low porosity
Professional bonding services available
Specialized Optoelectronic Devices: Used for thin film deposition to manufacture red, yellow-green light-emitting diodes (LEDs) or specific wavelength photodetectors.
High-Speed Electronic Devices: Serves as a thin film material for functional or buffer layers in certain high-frequency electronic components.
Optical and Protective Coatings: Leveraging its physicochemical stability to deposit wear-resistant, corrosion-resistant functional coatings or optical films.
Frontier Material Research: Serves as a GaP thin film deposition source for fundamental and applied research on novel heterojunctions, low-dimensional materials, and device physics.
Q1: What are the primary applications of GaP target materials?
A1: Primarily used for depositing GaP thin films to manufacture visible light emitters at specific wavelengths and certain high-speed electronic devices.
Q2: What purity requirements apply to target materials?
A2: To ensure film performance, purity is typically required at 99.99% (4N) or higher, depending on the device’s performance specifications.
Q3: What should be considered when selecting GaP target materials?
A3: Focus on the precision of stoichiometric ratios, target material density, and whether binding services compatible with your equipment are provided.
Q4: How should targets be maintained and stored?
A4: Store sealed in a dry, clean environment. Handle with care to avoid impacts. Keep the target surface clean after use.
Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports available upon request
Leveraging our expertise in compound semiconductor targets, we provide stable, reliable high-quality GaP targets and customized solutions.
Molecular Formula: GaP
Molecular Weight: 145.21 g/mol
Appearance: Gray to dark gray ceramic target
Density: 4.138 g/cm³
Melting Point: Approximately 1,470 °C
Crystal Structure: Cubic
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
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