| Product ID | Formula | Purity | Dimension | Inquiry |
|---|---|---|---|---|
| 310800ST001 | Ga2O3 | 99.99% | Ø 25.4 mm x 3.175 mm | Inquire |
| 310800ST002 | Ga2O3 | 99.999% | Ø 25.4 mm x 3.175 mm | Inquire |
| 310800ST003 | Ga2O3 | 99.99% | Ø 50.8 mm x 6.35 mm | Inquire |
| 310800ST004 | Ga2O3 | 99.999% | Ø 50.8 mm x 6.35 mm | Inquire |
| 310800ST005 | Ga2O3 | 99.99% | Ø 76.2 mm x 6.35 mm | Inquire |
| 310800ST006 | Ga2O3 | 99.999% | Ø 76.2 mm x 6.35 mm | Inquire |
| 310800ST007 | Ga2O3 | 99.99% | Ø 101.6 mm x 3.175 mm | Inquire |
| 310800ST008 | Ga2O3 | 99.999% | Ø 101.6 mm x 3.175 mm | Inquire |
| 310800ST009 | Ga2O3 | 99.99% | Ø 152.4 mm x 6.35 mm | Inquire |
| 310800ST010 | Ga2O3 | 99.999% | Ø 152.4 mm x 6.35 mm | Inquire |
Gallium oxide sputtering targets are dense ceramic targets fabricated from high-purity gallium oxide powder through advanced forming and sintering processes. Primarily composed of the most stable β phase, they serve as the core source material for depositing gallium oxide thin films in physical vapor deposition processes. As a next-generation ultra-wide bandgap semiconductor, films deposited using this target form the foundation for manufacturing next-generation ultra-high-voltage power electronic devices and deep ultraviolet optoelectronic devices.
We offer high-purity Ga2O3 ceramic sputtering targets in multiple sizes, predominantly featuring the β phase. Professional bonding services are also available. Contact us for specification lists and customized solutions.
Ultra-high purity
High density and low porosity
Stable β-phase structure
Excellent microstructural uniformity
Precise dimensional control
Bonding services available
Power Semiconductor Devices: Deposits Ga₂O₃ films for manufacturing ultra-high-voltage Schottky diodes and field-effect transistors, used in new energy vehicles and smart grids.
Deep Ultraviolet Optoelectronic Devices: Used to fabricate day-blind UV photodetectors and transparent conductive films for UV communications, early warning systems, and sensing applications.
Protective & Functional Coatings: Employed as wear-resistant, corrosion-resistant hard coatings or insulating layers for precision tools and electronic component surfaces.
Q1: What are the advantages of GaO targets compared to SiC and GaN targets?
A1: Wider bandgap and higher theoretical breakdown voltage. They offer greater potential for manufacturing ultra-high-voltage (>1200V) power devices, promising lower energy losses.
Q2: What purity level is required?
A2: Depends on the application. R&D and high-end devices typically require 99.99% (4N) purity or higher to ensure optimal electrical performance of the thin film.
Q3: Do you offer bonding services? Why is it necessary?
A3: Yes. Bonding to a metal backing plate (e.g., copper) enables efficient heat dissipation and secure mounting, preventing brittle ceramic targets from cracking during sputtering.
Q4: How should targets be stored and maintained?
A4: Store in sealed, moisture-proof containers within a dry, clean environment. Clean the target surface after use to prevent contamination and physical impact.
Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports available upon request
We provide a one-stop solution from high-purity powders to precision target manufacturing and bonding testing, serving as your reliable partner in developing fourth-generation semiconductor technologies.
Molecular Formula: Ga₂O₃
Molecular Weight: 187.44
Appearance: White target material
Density: Approximately 6.44 g/cm³
Crystal Structure: Monoclinic
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
If you need any service, please contact us