ULPMAT

Gallium Oxide

Chemical Name:
Gallium Oxide
Formula:
Ga2O3
Product No.:
310800
CAS No.:
12024-21-4
EINECS No.:
234-691-7
Form:
Sputtering Target
HazMat:
Product ID Formula Purity Dimension Inquiry
310800ST001 Ga2O3 99.99% Ø 25.4 mm x 3.175 mm Inquire
310800ST002 Ga2O3 99.999% Ø 25.4 mm x 3.175 mm Inquire
310800ST003 Ga2O3 99.99% Ø 50.8 mm x 6.35 mm Inquire
310800ST004 Ga2O3 99.999% Ø 50.8 mm x 6.35 mm Inquire
310800ST005 Ga2O3 99.99% Ø 76.2 mm x 6.35 mm Inquire
310800ST006 Ga2O3 99.999% Ø 76.2 mm x 6.35 mm Inquire
310800ST007 Ga2O3 99.99% Ø 101.6 mm x 3.175 mm Inquire
310800ST008 Ga2O3 99.999% Ø 101.6 mm x 3.175 mm Inquire
310800ST009 Ga2O3 99.99% Ø 152.4 mm x 6.35 mm Inquire
310800ST010 Ga2O3 99.999% Ø 152.4 mm x 6.35 mm Inquire
Product ID
310800ST001
Formula
Ga2O3
Purity
99.99%
Dimension
Ø 25.4 mm x 3.175 mm
Product ID
310800ST002
Formula
Ga2O3
Purity
99.999%
Dimension
Ø 25.4 mm x 3.175 mm
Product ID
310800ST003
Formula
Ga2O3
Purity
99.99%
Dimension
Ø 50.8 mm x 6.35 mm
Product ID
310800ST004
Formula
Ga2O3
Purity
99.999%
Dimension
Ø 50.8 mm x 6.35 mm
Product ID
310800ST005
Formula
Ga2O3
Purity
99.99%
Dimension
Ø 76.2 mm x 6.35 mm
Product ID
310800ST006
Formula
Ga2O3
Purity
99.999%
Dimension
Ø 76.2 mm x 6.35 mm
Product ID
310800ST007
Formula
Ga2O3
Purity
99.99%
Dimension
Ø 101.6 mm x 3.175 mm
Product ID
310800ST008
Formula
Ga2O3
Purity
99.999%
Dimension
Ø 101.6 mm x 3.175 mm
Product ID
310800ST009
Formula
Ga2O3
Purity
99.99%
Dimension
Ø 152.4 mm x 6.35 mm
Product ID
310800ST010
Formula
Ga2O3
Purity
99.999%
Dimension
Ø 152.4 mm x 6.35 mm

Gallium Oxide Sputtering Targets Overview

Gallium oxide sputtering targets are dense ceramic targets fabricated from high-purity gallium oxide powder through advanced forming and sintering processes. Primarily composed of the most stable β phase, they serve as the core source material for depositing gallium oxide thin films in physical vapor deposition processes. As a next-generation ultra-wide bandgap semiconductor, films deposited using this target form the foundation for manufacturing next-generation ultra-high-voltage power electronic devices and deep ultraviolet optoelectronic devices.

We offer high-purity Ga2O3 ceramic sputtering targets in multiple sizes, predominantly featuring the β phase. Professional bonding services are also available. Contact us for specification lists and customized solutions.

Product Highlights

Ultra-high purity
High density and low porosity
Stable β-phase structure
Excellent microstructural uniformity
Precise dimensional control
Bonding services available

Applications of Ga2O3 Sputtering Targets

Power Semiconductor Devices: Deposits Ga₂O₃ films for manufacturing ultra-high-voltage Schottky diodes and field-effect transistors, used in new energy vehicles and smart grids.
Deep Ultraviolet Optoelectronic Devices: Used to fabricate day-blind UV photodetectors and transparent conductive films for UV communications, early warning systems, and sensing applications.
Protective & Functional Coatings: Employed as wear-resistant, corrosion-resistant hard coatings or insulating layers for precision tools and electronic component surfaces.

FAQs

Q1: What are the advantages of GaO targets compared to SiC and GaN targets?
A1: Wider bandgap and higher theoretical breakdown voltage. They offer greater potential for manufacturing ultra-high-voltage (>1200V) power devices, promising lower energy losses.

Q2: What purity level is required?
A2: Depends on the application. R&D and high-end devices typically require 99.99% (4N) purity or higher to ensure optimal electrical performance of the thin film.

Q3: Do you offer bonding services? Why is it necessary?
A3: Yes. Bonding to a metal backing plate (e.g., copper) enables efficient heat dissipation and secure mounting, preventing brittle ceramic targets from cracking during sputtering.

Q4: How should targets be stored and maintained?
A4: Store in sealed, moisture-proof containers within a dry, clean environment. Clean the target surface after use to prevent contamination and physical impact.

Report

Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports available upon request

Why choose us?

We provide a one-stop solution from high-purity powders to precision target manufacturing and bonding testing, serving as your reliable partner in developing fourth-generation semiconductor technologies.

Molecular Formula: Ga₂O₃
Molecular Weight: 187.44
Appearance: White target material
Density: Approximately 6.44 g/cm³
Crystal Structure: Monoclinic

Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.

Outer Packaging: Cartons or wooden crates selected based on size and weight.

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