Gallium nitride wafers refer to standardized substrate discs manufactured through precision cutting, grinding, and polishing of high-purity gallium nitride single crystals. As the core foundational material for third-generation wide-bandgap semiconductors, it perfectly inherits GaN’s high-frequency, high-efficiency, high-voltage, and high-temperature characteristics. It provides an ideal crystal template for growing high-quality GaN epitaxial films and serves as the physical foundation for manufacturing all high-end GaN optoelectronic and power electronic devices.
We offer GaN single crystal substrates and epitaxial wafers in various sizes, crystal orientations, thicknesses, and conductivity types. Contact us for customized solutions.
Third-generation wide-bandgap semiconductor substrate
Extremely low dislocation defect density
High thermal conductivity and excellent chemical stability
Large-size wafer technology
Multiple crystal orientations and resistivity options available
Optoelectronics & Display: Serves as the epitaxial substrate for growing the core epitaxial layer in blue/green/white LEDs, laser diodes (LDs), and Micro-LED display chips.
RF & Microwave Communications: Used to manufacture high-frequency, high-power RF chips and power amplifiers for 5G/6G communication base stations, satellite communications, and radar systems.
Power Electronics: As substrates for manufacturing high-efficiency, high-power-density power electronic devices used in new energy vehicles, data centers, and fast-charging applications.
Emerging & Frontier Fields: For developing UV detectors, high-temperature sensors, quantum communication devices, and next-generation high-efficiency power integrated circuits.
Q1: What distinguishes GaN wafers from SiC wafers?
A1: They differ in material systems and application focus. GaN wafers offer higher electron mobility, making them ideal for high-frequency RF and optoelectronic devices; SiC wafers provide superior thermal conductivity, prioritizing ultra-high-voltage power devices.
Q2: Why are GaN-on-Si epitaxial wafers more common?
A2: The core reasons are cost and size advantages. Epitaxial growth of GaN on inexpensive silicon substrates enables larger-scale, lower-cost device fabrication, though crystal quality is inferior to GaN-on-GaN homoepitaxy.
Q3: Why are GaN wafers so expensive?
A3: Primarily due to extreme fabrication challenges. High-quality GaN single crystals require growth under high temperature and pressure, presenting significant technical barriers, high energy consumption, and low yield rates—resulting in costs far exceeding silicon substrates.
Q4: How should wafers be stored and handled?
A4: They must be stored and handled in specialized wafer boats within ultra-clean environments. Handling requires extreme care to prevent edge damage and surface contamination, as they are brittle and demand exceptionally high cleanliness standards.
Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports available upon request
Leveraging our deep technical expertise in wide-bandgap semiconductor materials, we provide high-quality, high-performance GaN substrate products and professional, reliable epitaxial solutions.
Molecular Formula: GaN
Molecular Weight: 83.73 g/mol
Appearance: Light yellow to gray single crystal wafer
Density: 6.15 g/cm³
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
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