| Product ID | Formula | Purity | Dimension | Inquiry |
|---|---|---|---|---|
| 310700ST001 | GaN | 99.99% | Ø 25.4 mm x 3.175 mm | Inquire |
| 310700ST002 | GaN | 99.99% | Ø 25.4 mm x 6.35 mm | Inquire |
| 310700ST003 | GaN | 99.99% | Ø 50.8 mm x 3.175 mm | Inquire |
| 310700ST004 | GaN | 99.999% | Ø 25.4 mm x 3.175 mm | Inquire |
| 310700ST005 | GaN | 99.999% | Ø 25.4 mm x 6.35 mm | Inquire |
| 310700ST006 | GaN | 99.999% | Ø 50.8 mm x 3.175 mm | Inquire |
Gallium nitride sputtering targets are specialized ceramic targets fabricated from high-purity gallium nitride (GaN) material. It combines all the outstanding properties of GaN as a third-generation wide-bandgap semiconductor material. As the core source material for fabricating high-performance GaN thin films via physical vapor deposition (PVD) technology, it provides critical thin-film solutions for manufacturing advanced optoelectronic, RF, and power semiconductor devices.
We offer high-quality GaN ceramic sputtering targets in multiple purities, sizes, crystal phases, and conductivity types, along with professional bonding services. Contact us.
High purity
Wide bandgap semiconductor (~3.4 eV) material
High density, low porosity
Excellent microstructural uniformity
Backing plate bonding available
Optoelectronics & Display: Used for depositing GaN films to manufacture blue/green LEDs, laser diodes, and Micro-LED display chips.
RF & Microwave Communications: Manufacture high-power, high-efficiency RF chips and power amplifiers for 5G/6G base stations and radar systems.
Power Electronics & Fast Charging: Depositing films to produce high-efficiency, compact power conversion devices for new energy vehicles and fast-charging power supplies.
Frontier & Interdisciplinary Research: Serving as a high-performance thin-film source for pioneering exploration in novel sensors, quantum devices, and spintronics.
Q1: What are the primary advantages of GaN targets?
A1: The core benefits are high frequency, high efficiency, and high voltage tolerance. Its wide bandgap properties enable devices to operate at higher frequencies, power levels, and temperatures, significantly outperforming traditional silicon materials.
Q2: What purity level is required?
A2: For high-end device manufacturing, 99.999% (5N) purity or higher is typically needed to ensure optimal thin-film electrical properties.
Q3: What precautions should be taken during use and storage?
A3: Targets are brittle and must be handled with care to prevent impact damage. Store in sealed, moisture-proof containers within a clean, dry environment.
Q4: How to select the appropriate conductivity type?
A4: This depends on device design. N-type targets are used for fabricating electron transport layers, while semi-insulating targets are suitable for regions requiring high-resistance isolation.
Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports available upon request
We provide high-quality GaN targets with outstanding performance and reliable stability. Leveraging our professional expertise, we offer comprehensive solutions from material selection to application support.
Molecular Formula: GaN
Molecular Weight: 83.73 g/mol
Appearance: Light yellow to gray ceramic target
Density: 6.15 g/cm³
Melting Point: Approximately 2,497 °C (before decomposition)
Crystal Structure: Hexagonal or cubic
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
If you need any service, please contact us
