Gallium nitride powder is a high-purity third-generation wide-bandgap semiconductor material with the chemical formula GaN. The product typically appears as grayish-black or pale yellow ultrafine powder, featuring a direct wide bandgap of approximately 3.4 eV, exceptionally high thermal conductivity, and outstanding chemical stability. It serves as a critical foundational material for fabricating high-performance GaN ceramic targets, sintered bodies, composite materials, and enabling advanced epitaxial growth. This material finds extensive applications in next-generation optoelectronics, RF, and power device sectors.
We offer a diverse range of high-quality GaN powders featuring ultra-high purity, selectable particle sizes, and crystal phases, along with professional custom packaging solutions. Contact us for samples.
Ultra-high purity
Wide bandgap semiconductor properties
Controllable particle size and morphology
Excellent thermal and chemical stability
Easy dispersion and mixing
Advanced Ceramics & Targets: Serves as primary material for hot-press sintering to produce high-density GaN ceramic sputtering targets or wear-resistant structural components.
Coatings and Surface Engineering: Used to prepare high-performance thermal spray or cold spray coatings, enhancing wear resistance and protective properties of components in high-temperature and corrosive environments.
Composites and Additives: Serves as a reinforcing phase or functional filler for manufacturing high-thermal-conductivity polymer composites or specialty ceramics.
Research and Device Development: Functions as a precursor powder for novel epitaxial techniques, nanomaterial synthesis, and cutting-edge studies in photocatalysis/electrocatalysis.
Q1: How to select the appropriate powder particle size?
A1: Depends on the process. Finer powders are required for dense ceramic fabrication; specific particle size distributions can be chosen for thermal spraying; nanoscale ultrafine powders are needed for epitaxial growth precursors.
Q2: Is GaN powder safe to use?
A2: Proper handling is essential. Avoid inhaling dust; wear protective equipment such as masks during operation and work in a well-ventilated area.
Q3: How should powder be stored?
A3: Store in sealed, dry, light-protected containers. Keep in a dry inert atmosphere or vacuum environment to prevent moisture absorption and oxidation.
Q4: What are the main differences between GaN powder and silicon powder?
A4: Significant performance gap. GaN is a wide-bandgap material offering superior high-voltage resistance, high-temperature tolerance, and frequency characteristics compared to silicon. It serves as the core material for next-generation semiconductors.
Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports available upon request
Leveraging our expertise in third-generation semiconductor powder materials and stringent quality control, we provide highly consistent, high-performance gallium nitride powder and customized solutions.
Molecular Formula: GaN
Molecular Weight: 83.73 g/mol
Appearance: Pale yellow to gray powder
Density: 6.15 g/cm³
Melting Point: Approximately 2,497 °C (before decomposition)
Crystal Structure: Hexagonal or cubic
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
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