ULPMAT

Copper Telluride

Chemical Name:
Copper Telluride
Formula:
CuTe
Product No.:
295201
CAS No.:
12019-23-7
EINECS No.:
234-644-0
Form:
Sputtering Target
HazMat:
Product ID Formula Purity Dimension Inquiry
295201ST001 CuTe 99.99% Ø 50.8 mm x 6.35 mm Inquire
295201ST002 CuTe 99.99% Ø 76.2 mm x 6.35 mm Inquire
295201ST003 CuTe 99.99% Ø 101.6 mm x 3.175 mm Inquire
Product ID
295201ST001
Formula
CuTe
Purity
99.99%
Dimension
Ø 50.8 mm x 6.35 mm
Product ID
295201ST002
Formula
CuTe
Purity
99.99%
Dimension
Ø 76.2 mm x 6.35 mm
Product ID
295201ST003
Formula
CuTe
Purity
99.99%
Dimension
Ø 101.6 mm x 3.175 mm

Copper Telluride Sputtering Target Overview

Copper telluride sputtering targets are a key material for depositing semiconductor and thermoelectric functional films.

We supply high-purity targets with precise stoichiometric ratios. Inquiries regarding technical specifications and custom requirements are welcome.

Product Highlights

High thermoelectric conversion efficiency
Chemically stable film properties
High material purity grade
Superior and reliable sputtering performance

Applications of Copper Telluride Sputtering Targets

Thermoelectric devices: Used to fabricate critical thin film layers in high-performance thermoelectric modules, directly converting waste heat into usable electrical energy.
Photovoltaic Absorber Layer: Serves as an alternative absorber material for novel thin-film solar cells, exhibiting unique photoelectric response characteristics.
Phase Change Memory Material: Utilized in advanced phase change memory (PCM) devices, leveraging its rapid and stable crystalline-amorphous transitions for data storage.
Infrared Detection and Sensing: Deposited films enable fabrication of photodetectors and sensing elements sensitive to specific infrared wavelength bands.

FAQs

Q1: What are the main characteristics of copper telluride thin films?
A1: They exhibit excellent thermoelectric properties, a narrow bandgap, and sensitivity to infrared light, making them suitable for energy conversion and detection applications.

Q2: Is the stoichiometric ratio (Cu:Te) of the target material adjustable?
A2: Yes, we can prepare target materials with different stoichiometric ratios, such as CuTe or Cu₂Te, according to your research or process requirements.

Q3: What are the requirements for the sputtering environment when using this target material?
A3: Controlled atmosphere is typically required, especially during reactive sputtering where precise control of reaction gas partial pressures (e.g., nitrogen, oxygen) is essential to obtain the target film.

Q4: How is its thermoelectric performance evaluated?
A4: Primarily by measuring the Seebeck coefficient, electrical conductivity, and thermal conductivity of the deposited film, ultimately calculating its figure of merit (ZT value).

Report

Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports available upon request

Why Choose Us?

We specialize in compound semiconductor targets. Leveraging advanced fabrication techniques and stringent quality management systems, we ensure exceptional performance consistency and reliability in every target. Committed to delivering professional technical support and customized solutions, we serve as your reliable partner for pioneering thin-film technology research and applications

Chemical Formula: CuTe
Molecular Weight: 159.56 g/mol
Appearance: Black, dense target material
Density: 6.2 g/cm³
Melting Point: 1,050 °C (before decomposition)
Crystal Structure: Hexagonal

Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.

Outer Packaging: Cartons or wooden crates selected based on size and weight.

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