ULPMAT

Cobalt Silicide

Chemical Name:
Cobalt Silicide
Formula:
CoSi2
Product No.:
271400
CAS No.:
12017-12-8
EINECS No.:
234-616-8
Form:
Sputtering Target
HazMat:
Product ID Formula Purity Dimension Inquiry
271400ST001 CoSi2 99.5% Ø 50.8 mm x 3.175 mm Inquire
Product ID
271400ST001
Formula
CoSi2
Purity
99.5%
Dimension
Ø 50.8 mm x 3.175 mm

Cobalt Silicide Sputtering Target Overview

Cobalt Silicide sputtering targets are high-purity cobalt silicide targets with excellent conductivity and thermal stability, widely used in semiconductor thin film, microelectronic device, and high-temperature conductive layer deposition.

We offer CoSi2 sputtering targets in various sizes, crystal forms, and purity grades, and support sample testing and technical consultation. Please contact us for detailed information and process solutions.

Product Highlights

Dense and uniform crystal structure

Stable conductivity

Excellent thermal stability

Corrosion and wear resistance

Suitable for various sputtering processes

Customizable size and crystal form

Customizable backplane and bonding

Supports scientific research experiments and process verification

Applications of Cobalt Silicide Sputtering Targets

Semiconductor Thin Film Preparation: Cobalt Silicide targets are suitable for semiconductor thin film deposition, ensuring dense and uniform films and improving device conductivity.

Microelectronic Device Deposition: Used for metallization layer deposition in microelectronic devices, improving device performance stability and reliability.

High-Temperature Conductive Layers: Conductive thin films can be deposited at high temperatures, exhibiting good thermal stability and conductivity.

Research and Materials Development: Widely used in research institutions and corporate R&D departments for material performance testing and process parameter optimization.

FAQs

Q1: What sputtering methods is Cobalt Silicide sputtering target suitable for?

A1: It can be used in thin film processes such as magnetron sputtering, RF sputtering, and chemical vapor deposition to meet the needs of microelectronic deposition.

Q2: Can the target crystal form be customized?

A2: Yes, we can provide different crystal forms of targets according to customer needs to optimize thin film performance.

Q3: Is the target prone to cracking during sputtering?

A3: Prepared using a high-density metallurgical process, the grains are uniform, which effectively reduces the risk of cracks and voids.

Q4: What precautions should be taken when storing the target?

A4: It is recommended to store it in a sealed, dry, and ventilated environment, avoiding moisture and contamination to maintain performance stability.

Reports

Each batch is supplied with:

Certificate of Analysis (COA)

Technical Data Sheet (TDS)

Material Safety Data Sheet (MSDS)

Size Inspection Report

Third-party testing reports available upon request

Why Choose Us?

We specialize in the R&D and stable supply of high-purity cobalt silicide sputtering targets. With a mature quality management system and flexible customization capabilities, we can provide customers with reliable, traceable target solutions suitable for scientific research and industrial applications, helping projects progress efficiently.

Molecular Formula: CoSi₂

Molecular Weight: 115.11 g/mol

Appearance: Silver-gray to black

Density: 6.00 g/cm³

Melting Point: 1,400 ℃

Crystal Structure: Face-centered cubic

Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.

Outer Packaging: Cartons or wooden crates selected based on size and weight.

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