ULPMAT

Bismuth titanium oxide

Chemical Name:
Bismuth titanium oxide
Formula:
Bi4Ti3O12
Product No.:
83220800
CAS No.:
12010-77-4
EINECS No.:
234-564-6
Form:
Sputtering Target
HazMat:
Product ID Formula Purity Dimension Inquiry
83220800ST001 Bi4Ti3O12 99.999% Ø 50.8 mm x 3.175 mm Inquire
83220800ST002 Bi4Ti3O12 99.999% Ø 50.8 mm x 6.35 mm Inquire
83220800ST003 Bi4Ti3O12 99.999% Ø 76.2 mm x 3.175 mm Inquire
Product ID
83220800ST001
Formula
Bi4Ti3O12
Purity
99.999%
Dimension
Ø 50.8 mm x 3.175 mm
Product ID
83220800ST002
Formula
Bi4Ti3O12
Purity
99.999%
Dimension
Ø 50.8 mm x 6.35 mm
Product ID
83220800ST003
Formula
Bi4Ti3O12
Purity
99.999%
Dimension
Ø 76.2 mm x 3.175 mm

Bismuth Titanium Oxide Sputtering Target Overview

Bismuth titanium oxide sputtering targets are high-performance materials developed for functional ceramic thin film deposition applications. Known for their excellent chemical stability and ferroelectric properties, this material is suitable for the preparation of advanced devices such as high dielectric constant, piezoelectric, optoelectronic and non-volatile memory thin films.

We provide Bismuth titanium oxide sputtering targets in various shapes and sizes, including round, rectangular, etc., and can be customized according to customer specific requirements. We also provide a full range of after-sales technical support and application suggestions, please feel free to consult.

Product highlights

Purity: 99.999%
Dense ceramic structure, suitable for high stability sputtering
Customizable size and shape
Suitable for thin film preparation of ferroelectric, piezoelectric and optoelectronic devices

Applications of Bismuth Titanium Oxide Sputtering Target

Ferroelectric memory (FeRAM): Bi4Ti3O12 is a typical Aurivillius phase ferroelectric material, widely used in non-volatile memory, with excellent polarization retention performance.
Piezoelectric devices: can be used for piezoelectric drive layer in microelectromechanical systems (MEMS), with good electromechanical coupling coefficient.
Optoelectronic thin film devices: used for integrated optical devices or multifunctional modulation layers, with both nonlinear optical and electro-optical effects.
High dielectric films: suitable for capacitors, DRAM dielectric layers and signal control films.

Reports

We provide detailed certificates of analysis (COA), material safety data sheets (MSDS) and related XRD, SEM or density test reports for each batch of products. We also welcome customers to designate third-party testing agencies for verification to jointly ensure high-quality delivery.

Molecular formula: Bi₄Ti₃O₁₂
Molecular weight: 1092.38 g/mol
Appearance: Off-white or light yellow ceramic target, smooth surface
Density: about 8.1 g/cm³ (close to theoretical density)
Melting point: about 1,000 °C
Crystal structure: layered perovskite structure, orthorhombic system

Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.

Outer Packaging: Cartons or wooden crates selected based on size and weight.

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