ULPMAT

Bismuth Germanium Oxide (BGO)

Chemical Name:
Bismuth Germanium Oxide (BGO)
Formula:
Bi4Ge3O12
Product No.:
83320800
CAS No.:
12233-56-6
EINECS No.:
235-457-7
Form:
Sputtering Target
HazMat:
Product ID Formula Purity Dimension Inquiry
83320800ST001 Bi4Ge3O12 99.99% Ø 50.8 mm x 3.175 mm Inquire
83320800ST002 Bi4Ge3O12 99.99% Ø 50.8 mm x 6.35 mm Inquire
83320800ST003 Bi4Ge3O12 99.99% Ø 76.2 mm x 3.175 mm Inquire
83320800ST004 Bi4Ge3O12 99.99% Ø 101.6 mm x 3.175 mm Inquire
Product ID
83320800ST001
Formula
Bi4Ge3O12
Purity
99.99%
Dimension
Ø 50.8 mm x 3.175 mm
Product ID
83320800ST002
Formula
Bi4Ge3O12
Purity
99.99%
Dimension
Ø 50.8 mm x 6.35 mm
Product ID
83320800ST003
Formula
Bi4Ge3O12
Purity
99.99%
Dimension
Ø 76.2 mm x 3.175 mm
Product ID
83320800ST004
Formula
Bi4Ge3O12
Purity
99.99%
Dimension
Ø 101.6 mm x 3.175 mm

Bismuth Germanium Oxide Sputtering Target Overview

Bismuth Germanium Oxide sputtering targets are high-performance materials designed for ferroelectric, optoelectronic and functional thin film deposition processes. The material is structurally stable, chemically uniform, and has excellent density and purity, which ensures consistent film composition, strong adhesion, and high film quality.

We offer Bismuth Germanium Oxide sputtering targets in various shapes and sizes, including round and rectangular, and can be customized according to your specific requirements. We also provide comprehensive after-sales support. If you have any questions about use, please feel free to contact us.

Product Highlights

Purity: 99.99%
High-density ceramic structure for stable deposition
Customizable size and shape
Target binding service available
Excellent film uniformity and adhesion
Applicable to a variety of functional thin film preparation fields

Applications of Bismuth Germanium Oxide Sputtering Target

Ferroelectric memory: Bi₄Ti₃O₁₂ is a classic ferroelectric material that can be used for the deposition of ferroelectric layers in non-volatile memory (FeRAM).
Optoelectronic devices: Used to prepare multifunctional oxide films with photoresponsive characteristics for photoelectric conversion and sensors.
Piezoelectric and dielectric materials: can be used as functional layer materials in ceramic capacitors and multilayer chip components, with good dielectric properties.
Integrated device films: functional films used in integrated circuits, such as self-polarized ferroelectric capacitors.

Reports

We provide a complete certificate of analysis (COA), material safety data sheet (MSDS) and relevant component test reports for each batch of Bismuth Germanium Oxide sputtering targets. We can also provide third-party test reports upon customer request to enhance confidence in material quality.

Molecular formula: Bi₄Ge₃O₁₂
Molecular weight: 1,017.8 g/mol
Appearance: Off-white or light yellow ceramic target with a flat and dense surface
Density: Approximately 7.1 g/cm³ (close to theoretical density)
Melting point: Approximately 930 °C (relatively low, suitable for thermal sensitive applications)
Crystal structure: cubic system (body-centered structure, good isotropy)

Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.

Outer Packaging: Cartons or wooden crates selected based on size and weight.

SKU 83320800ST Category Brand:

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