Silicon carbide wafers are wide-bandgap semiconductor substrate materials designed for high-power, high-frequency, and high-temperature electronic devices, exhibiting excellent thermal conductivity and electrical stability. They are widely used in power devices, RF devices, and high-reliability electronic systems.
We can provide Silicon carbide wafers for adapter device manufacturing processes and support technical integration for crystal orientation, surface states, and application parameters. Contact us now!
Wide bandgap semiconductor material
High thermal conductivity
High breakdown electric field
Suitable for high-temperature, high-power applications
Good device process compatibility
Power Semiconductor Devices: Silicon carbide wafers are widely used in the manufacture of power devices such as MOSFETs and Schottky diodes, improving efficiency and reliability.
RF and High-Frequency Electronics: In high-frequency communication and RF devices, silicon carbide substrates help reduce power consumption and improve device stability.
New Energy Vehicles and Power Electronics: Used in automotive-grade power modules and power conversion systems, supporting high-temperature and high-voltage operating environments.
High-Reliability Industrial and Aerospace Electronics: Electronic systems and critical components suitable for operation in harsh environments.
Q1: Why is Silicon Carbide Wafer suitable for high-power applications?
A1: Its high breakdown electric field and excellent thermal conductivity enable stable operation of devices under high-power conditions.
Q2: How does SiC wafer perform in high-temperature environments?
A2: It maintains good electrical and structural stability under high-temperature conditions.
Q3: Which traditional materials does silicon carbide wafer primarily replace?
A3: In high-power and high-efficiency applications, it is often used to replace traditional silicon-based substrates.
Q4: Is the wafer surface condition important for device fabrication processes?
A4: Stable and controllable surface conditions help improve the consistency of subsequent epitaxy and device fabrication processes.
Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Size Inspection Report
Third-party testing reports available upon request
We understand the requirements for material consistency and controllability in silicon carbide device manufacturing processes. We can provide stable and traceable Silicon Carbide Wafers to support customers in achieving reliable device performance during the R&D and application phases.
Molecular Formula: SiC
Molecular Weight: 52.11 g/mol
Appearance: Black wafer
Density: 3.21–3.22 g/cm³
Melting Point: 2730 °C (decomposes)
Crystal Structure: Hexagonal (α-SiC); Cubic (β-SiC)
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
If you need any service, please contact us
