Gallium telluride is a crucial III-VI group layered compound semiconductor material. The product consists of high-purity particles, typically appearing gray to black in color, with either monoclinic or hexagonal crystal structures. It possesses a narrow direct bandgap (approximately 1.0–1.8 eV), exhibits sensitivity to near-infrared light, and demonstrates outstanding optoelectronic and thermoelectric properties, along with potential as a phase change material. These characteristics make it a key material for infrared detection, new energy conversion, and cutting-edge electronic device research.
We offer high-quality gallium telluride granules in multiple purity and particle size options, with professional custom packaging available. Contact us for your customized solution.
Narrow direct bandgap semiconductor
Unique layered crystal structure
Excellent optoelectronic and thermoelectric properties
Good chemical stability
Potential for phase change material applications
Infrared Optoelectronics: Used in manufacturing high-performance near-infrared photodetectors and light-emitting devices responsive to specific infrared wavelengths.
Thermoelectric Conversion: Serves as a thermoelectric material for developing high-efficiency thermoelectric power modules that directly convert waste heat into electricity.
Frontier 2D Materials: Acts as a precursor for preparing two-dimensional GaTe nanosheets, enabling research into novel physical properties and application in novel devices.
Phase-Change Memory Research: Utilized as a candidate material for next-generation phase-change memory, leveraging its rapid reversible crystalline phase transitions.
Q1: What is the difference between GaTe and Ga₂Te₃?
A1: The core differences lie in their stoichiometry and bandgap. GaTe is a 1:1 compound with a narrower bandgap, emphasizing optoelectronic devices; Ga₂Te₃ is a telluride-rich compound with an even narrower bandgap and more prominent thermoelectric properties.
Q2: How should the product be stored?
A2: Store in a sealed container away from light, ideally in a dry inert gas environment to prevent oxidation or moisture damage that could affect performance.
Q3: Is it safe to use?
A3: Tellurides possess some toxicity. Avoid inhaling dust during handling. Work in a well-ventilated area and wear appropriate personal protective equipment.
Q4: What are the primary advantages of GaTe?
A4: Its key strengths lie in its suitable narrow direct bandgap and layered structure, offering unique potential for infrared detection and novel two-dimensional electronic devices.
Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports available upon request
We specialize in providing high-purity, stable-performance specialty semiconductor materials, backed by professional technical support to empower your cutting-edge exploration in new materials and device development.
Molecular Formula: GaTe
Molecular Weight: 165.72 g/mol
Appearance: Grayish-black granules
Density: 5.76 g/cm³
Melting Point: Approximately 780 °C
Crystal Structure: Monoclinic
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
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