ULPMAT

Gallium Selenide

Chemical Name:
Gallium Selenide
Formula:
Ga2Se3
Product No.:
313401
CAS No.:
12024-24-7
EINECS No.:
234-693-8
Form:
Sputtering Target
HazMat:
Product ID Formula Purity Dimension Inquiry
313401ST001 Ga2Se3 99.99% Ø 50.8 mm x 6.35 mm Inquire
313401ST002 Ga2Se3 99.99% Ø 101.6 mm x 3.175 mm Inquire
Product ID
313401ST001
Formula
Ga2Se3
Purity
99.99%
Dimension
Ø 50.8 mm x 6.35 mm
Product ID
313401ST002
Formula
Ga2Se3
Purity
99.99%
Dimension
Ø 101.6 mm x 3.175 mm

Gallium Selenide Sputtering Targets Overview 

Gallium selenide sputtering targets are functional ceramic targets fabricated from high-purity gallium selenide powder or ingots through advanced forming and sintering processes. This material features a moderate direct bandgap and unique optoelectronic properties, serving as the core source material for depositing gallium selenide films in physical vapor deposition (PVD) processes. Films fabricated using this target are fundamental to manufacturing advanced optoelectronic devices, infrared detection components, and novel functional coatings.

We offer gallium selenide ceramic sputtering targets in multiple purities, dimensions, and with bonding services. Contact us for details.

Product Highlights

High purity with precise stoichiometry
High density, low porosity
Excellent film deposition uniformity
Multiple size options available
Professional backing plate bonding provided

Applications of Gallium Selenide Sputtering Targets

Optoelectronic Devices & Solar Cells: Deposits thin-film solar cell absorber layers or photodetector functional layers for high-efficiency photovoltaic conversion.
Infrared Technology & Detectors: Prepares sensitive thin-film materials for infrared detectors and thermal imaging sensors.
Functional Coatings & Surface Engineering: Serves as wear-resistant, corrosion-resistant, or optically specialized protective coatings.
Frontier Materials and Scientific Research: Serves as a fundamental thin-film material for R&D in novel semiconductor devices, phase-change materials, and low-dimensional materials.

FAQs

Q1: What distinguishes gallium selenide targets from gallium arsenide targets?
A1: They differ in material composition and performance focus. Gallium selenide has a moderate bandgap, emphasizing infrared optoelectronics; gallium arsenide exhibits high electron mobility, making it the mainstream material for high-frequency microwave and laser applications.

Q2: How should target purity be selected?
A2: This depends on the required thin-film performance. For basic R&D, 4N (99.99%) grade is sufficient; for high-performance device fabrication, 5N (99.999%) or higher purity is recommended.

Q3: Targets contain selenium. Are they safe?
A3: Solid-state targets are stable but require proper handling. Avoid inhaling processing dust and wear protective gear during operation. Refer to the Material Safety Data Sheet (MSDS) for specific guidelines.

Q4: How should the target be maintained and stored?
A4: Seal to prevent moisture. Handle with care during removal and placement. Store in a dry environment. Avoid contaminating the target surface during use. Handle gently to prevent cracking of the brittle ceramic material.

Report

Each batch is supplied with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports available upon request

Why Choose Us?

Leveraging our expertise in compound semiconductor targets, we provide highly stable, customizable, high-quality gallium selenide targets and reliable technical support.

Molecular Formula: Ga₂Se₃
Molecular Weight: 376.44 g/mol
Appearance: Dark red to reddish-brown dense target material
Density: Approximately 5.03 g/cm³
Crystal Structure: Defective Zinc Blende, Cubic crystal system

Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.

Outer Packaging: Cartons or wooden crates selected based on size and weight.

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