Indium Phosphide (InP) sputtering target is a high-purity compound semiconductor material known for its excellent electronic and optoelectronic properties. It is widely used in high-speed electronic devices, photonic components, laser diodes, and advanced thin film deposition. With superior carrier mobility, wide direct bandgap, and high thermal stability, InP sputtering targets are ideal for producing high-performance semiconductor films in communication and photonic systems.
Our InP sputtering targets are fabricated from high-purity 99.99% indium phosphide material, featuring dense microstructure, precise composition control, and excellent uniformity — ensuring stable sputtering performance for both R&D and industrial-scale production.
High Purity: 99.99% purity for low-defect, high-quality thin films.
Uniform Density: Vacuum hot-pressed and HIP-treated for fine grain structure and low porosity.
Excellent Electrical & Optical Properties: Direct bandgap semiconductor suitable for optoelectronic applications.
Stable Sputtering Performance: Uniform film thickness and consistent composition.
Customizable Sizes: Available in standard and custom diameters, thicknesses, and configurations (planar or rotary).
Optoelectronic Devices: For laser diodes, photodetectors, and optical communication components.
High-Frequency Electronics: Used in HEMTs, ICs, and high-speed transistors.
Thin Film Deposition: Suitable for magnetron sputtering and evaporation coating systems.
Semiconductor Research: Core material for III–V compound semiconductor research and nanostructure development.
Professional Manufacturer: Specialized in high-purity sputtering targets and semiconductor materials.
High-Purity Assurance: Produced using refined synthesis and zone melting processes.
Customizable Options: Various shapes (disc, rectangle, ring) and bonding services available.
Strict Quality Control: Verified by ICP-MS and XRD analysis for purity and phase consistency.
Global Supply: Secure packaging, worldwide logistics, and technical support for international customers.
Comprehensive Documentation: COA, TDS, and MSDS provided with every batch.
F1. What is the standard purity of your InP sputtering target?
A1. Standard purity is 99.999% (5N). Higher grades and custom specifications are available upon request.
F2. What sizes and shapes are available?
A2. We offer planar (circular or rectangular) and rotary targets, customizable in size and thickness based on your equipment.
F3. Can you provide bonding services?
A3. Yes, we provide indium or elastomer bonding to backing plates upon request.
F4. What deposition methods are compatible with InP targets?
A4. Suitable for DC/RF magnetron sputtering and vacuum evaporation systems.
F5. What are the storage recommendations?
A5. Store in a dry, inert atmosphere or vacuum-sealed package to prevent oxidation and moisture exposure.
Each batch is provided with:
Certificate of Analysis (COA)
Technical Data Sheet (TDS)
Material Safety Data Sheet (MSDS)
Third-party testing reports are available upon request.
Chemical Formula: InP
Molecular Weight: 283.81 g/mol
Purity: 99.99% (customizable)
Appearance: Gray to black metal powder or target
Density: ~4.8 g/cm³
Melting Point: ~700°C
Boiling Point: ~2000°C
Crystal Structure: Zinc blende (cubic crystal structure)
Sputtering Method: DC Sputtering
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
If you need any service, please contact us
