| Product ID | Formula | Purity | Dimension | Inquiry |
|---|---|---|---|---|
| 721400ST001 | HfSi2 | 99.8% (Zr< 0.5wt%) | Ø 50.8 mm x 3.175 mm | Inquire |
| 721400ST002 | HfSi2 | 99.8% (Zr< 0.5wt%) | Ø 76.2 mm x 3.175 mm | Inquire |
| 721400ST003 | HfSi2 | 99.8% (Zr< 0.5wt%) | Ø 101.6 mm x 6.35 mm | Inquire |
Hafnium Silicide sputtering targets are high-performance materials developed specifically for thin-film deposition processes for high-temperature electronic devices, semiconductor metal gates, electrode buffer layers, and other applications. With a purity of 99.8%, they offer excellent density and structural stability, enabling uniform thin-film deposition and excellent adhesion, making them suitable for fabricating functional thin films under demanding conditions.
We offer Hafnium Silicide targets in a variety of shapes and sizes, and can customize them to meet your specific requirements. We also provide comprehensive technical support and after-sales service. Please feel free to contact us with any questions regarding their use.
Purity: 99.8%
High melting point material, suitable for high-temperature deposition processes
Excellent density and conductivity, improving film quality
Customizable sizes and shapes, including back-target welding
Suitable for metal gates, diffusion barriers, and high-temperature-resistant thin-film materials
Semiconductor devices: Widely used in high-K metal gate structures, interconnect layers, and contact electrode materials.
Barrier layer material: HfSi₂ acts as a stable diffusion barrier, effectively preventing metal migration. High-temperature-resistant structural films: Offer excellent thermal stability and chemical inertness in high-temperature environments.
MEMS and microelectronic systems: Suitable for manufacturing microsensors, electrodes, and protective layers.
We provide a Certificate of Analysis (COA), Material Safety Data Sheet (MSDS), and relevant physical parameter reports for each batch of HfSi₂ targets. We also support third-party testing services to meet higher quality control standards.
Molecular formula: HfSi₂
Molecular weight: 234.65 g/mol
Appearance: Gray-black target with a metallic luster and a dense, smooth surface
Density: Approximately 8.0 g/cm³ (close to theoretical density)
Melting point: Approximately 1,830°C (high melting point, suitable for high-temperature thin-film processes)
Crystal structure: Orthorhombic (C49-type structure)
Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.
Outer Packaging: Cartons or wooden crates selected based on size and weight.
If you need any service, please contact us
