ULPMAT

Bismuth Antimony Telluride

Chemical Name:
Bismuth Antimony Telluride
Formula:
BiSbTe
Product No.:
83515200
CAS No.:
EINECS No.:
Form:
Sputtering Target
HazMat:
Product ID Formula Purity Dimension Inquiry
83515200ST001 BiSbTe 99.99% Ø 25.4 mm x 3.175 mm Inquire
83515200ST002 BiSbTe 99.99% Ø 50.8 mm x 3.175 mm Inquire
83515200ST003 BiSbTe 99.99% Ø 50.8 mm x 6.35 mm Inquire
83515200ST004 BiSbTe 99.99% Ø 76.2 mm x 3.175 mm Inquire
83515200ST005 BiSbTe 99.99% Ø 101.6 mm x 3.175 mm Inquire
Product ID
83515200ST001
Formula
BiSbTe
Purity
99.99%
Dimension
Ø 25.4 mm x 3.175 mm
Product ID
83515200ST002
Formula
BiSbTe
Purity
99.99%
Dimension
Ø 50.8 mm x 3.175 mm
Product ID
83515200ST003
Formula
BiSbTe
Purity
99.99%
Dimension
Ø 50.8 mm x 6.35 mm
Product ID
83515200ST004
Formula
BiSbTe
Purity
99.99%
Dimension
Ø 76.2 mm x 3.175 mm
Product ID
83515200ST005
Formula
BiSbTe
Purity
99.99%
Dimension
Ø 101.6 mm x 3.175 mm

Bismuth Antimony Telluride Sputtering Target Overview

Bismuth Antimony Telluride sputtering targets are high-performance functional materials developed for thin film applications in thermoelectric and electronic devices. Their precise composition control and dense structure ensure stable thermoelectric performance and excellent film bonding. The high purity of the material enables a low-defect, high-consistency deposition process.

We offer Bismuth Antimony Telluride sputtering targets in various shapes and sizes, including round, rectangular and ring structures, and can be customized according to your specific requirements. We also provide comprehensive technical support services. If you have any questions about use or performance, please feel free to contact us.

Product Highlights

Precise composition control (adjustable Bi:Sb:Te atomic ratio)
High-density dense sintering for uniform deposition
Customizable size and formulation (both n-type and p-type)
Target bonding service available
Applicable to thermoelectric devices, microelectronic thin film devices and MEMS systems

Applications of Bismuth Antimony Telluride Sputtering Target

Thermoelectric devices: BiSbTe is one of the most effective thermoelectric materials in the room temperature range and can be used to manufacture thermoelectric cooling modules, energy recovery devices (TEGs), etc.
Microelectronic packaging: suitable for making low-power temperature difference sensors, on-chip cooling and other functional devices.
MEMS devices: used for micro-thermoelectric generators and micro-coolers, with good integration compatibility and stable film performance.
Flexible electronics and wearable devices: excellent film structure, suitable for bendable thermoelectric devices, improving comfort and energy efficiency.

Report

We provide detailed certificates of analysis (COA), material safety data sheets (MSDS) and component test reports for each batch of products. If third-party testing or special parameter verification is required, we can also provide support to ensure that customers get reliable quality assurance.

Molecular formula: BiSbTe
Appearance: Metallic gray to dark gray dense ceramic target, smooth surface or visible microscopic crystal surface
Crystal structure: Hexagonal system (layered structure)
Chemical stability: More stable in a dry environment, avoid high humidity or strong oxidizing environment

Inner Packaging: Vacuum-sealed bags and boxed to prevent contamination and moisture.

Outer Packaging: Cartons or wooden crates selected based on size and weight.

SKU 83515200ST Category Brand:

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